RecursosCommon electrical symbols (IEC 60617)
IGFET, enhancement, P channel, substrate out symbol (DWG block)
IGFET, enhancement, P channel, substrate out is a ready-to-use AutoCAD block named IEC_IGFET_ENH_P_SUB in the Common electrical symbols (IEC 60617), group “Semiconductors”. It carries 8 attributes, 2 of them visible, so it works in equipment lists and BlockSync exports.
Block details
| Block name | IEC_IGFET_ENH_P_SUB |
|---|---|
| Library | Common electrical symbols (IEC 60617) |
| Group | Semiconductors |
| Standard | IEC 60617 |
| Attributes | 8 attributes, 2 visible |
Attributes
Visible on the drawing: TAG, TYPE.
Hidden, they carry the data for schedules: VOLTAGE, CURRENT, PACKAGE, MANUFACTURER, PART_NO, DESC.
Export the attributes of every copy in a drawing to Excel with BlockSync, check them and write the corrections back in one run.
How to use it
- Download the ZIP and unzip it. It holds one DWG with the block IEC_IGFET_ENH_P_SUB.
- Open the DWG and copy the block into your drawing, or insert it from the DWG with INSERT.
- Double-click a copy to fill in the tag and the other attributes.
The symbol is our own drawing after the common form of IEC 60617, not a certified copy. The library page explains how the symbols relate to the standard.
Names in other languages
The same symbol under its name in the other site languages.
- inglês
- IGFET, enhancement, P channel, substrate out
- chinês simplificado
- IGFET，增强型，P 沟道，衬底引出
- chinês tradicional
- IGFET，增強型，P通道，基體引出
- japonês
- IGFET エンハンスメント形 Pチャネル 基板端子引出し
- coreano
- IGFET, 증가형, P채널, 기판 인출
- alemão
- IGFET, Anreicherungstyp, P-Kanal, Substrat herausgeführt
- francês
- IGFET à enrichissement, canal P, substrat sorti
- italiano
- IGFET ad arricchimento, canale P, substrato esterno
- espanhol
- IGFET de enriquecimiento, canal P, sustrato accesible
